UPDATED. 2021-04-12 19:25 (월)
Kioxia and Western Digital announces 162-layer 3D flash memory 
Kioxia and Western Digital announces 162-layer 3D flash memory 
  • Nari Lee
  • 승인 2021.02.26 07:35
  • 댓글 0
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Companies reduce die size by 40% compared to 112-layer
Image: Western Digital, Kioxia
Image: Western Digital, Kioxia

Kioxia and Western Digital announced that they have developed their Gen 6 162-layer 3D flash memory.

The latest chip, thanks to a new architecture beyond the conventional eight-stagger memory hole array, has up to 10% greater lateral cell array density compared to the Gen 5, the pair said.

The new flash memory also has 40% reduced die size compared to 112-layer version and more optimized cost, the companies said.

They also applied Circuit Under Array CMOS placement and four-plane operation, which together deliver nearly 2.4 times improvement in program performance and 10% improvement in read latency compared to Gen 5, Kioxia and Western Digital said, while I/O performance also improved by 66%.

Cost per bit reduced and manufactured bits per wafer is increased by 70% compared to the previous generation, they said.


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