Samsung has developed a 512GB DDR5 memory module and is collaborating with Intel in the transition to DDR5.
The company said Thursday that its latest memory supports data transfer rate of up to 7,200Mbps, double that of DDR4. This means two 30GB UHD movie can be processed within a second, Samsung said.
Samsung also applied high-k metal gate (HKMG) on the memory, the first in the industry to do so. This allowed it to reduce power consumption by 13%, the company said, and will make the chip optimal for use in data centers.
High-k material was used as the insulator layer to reduce current leakge.
Samsung said it also applied its through silicon via (TSV) technology on the eight DRAM layers of the module. The company first applied TSV technology on its DDR4 memory back in 2014.
“Samsung is the only semiconductor company with logic and memory capabilities and the expertise to incorporate HKMG cutting-edge logic technology into memory product development,” said Young-Soo Sohn, VP of DRAM Memory Planning/Enabling Group at Samsung Electronics.
“By bringing this type of process innovation to DRAM manufacturing, we are able to offer our customers high-performance, yet energy-efficient memory solutions to power the computers needed for medical research, financial markets, autonomous driving, smart cities and beyond.”
“As the amount of data to be moved, stored and processed increases exponentially, the transition to DDR5 comes at a critical inflection point for cloud datacenters, networks and edge deployments,” said Carolyn Duran, VP of Memory and IO Technology at Intel.
“Intel’s engineering teams closely partner with memory leaders like Samsung to deliver fast, power-efficient DDR5 memory that is performance-optimized and compatible with our upcoming Intel Xeon Scalable processors, code-named Sapphire Rapids.”