ACM Research on Wednesday announced in South Korea that its 300mm Ultra Fn furnace dry processing equipment will support additional semiconductor manufacturing processes.
The additions are: un-doped poly deposition, doped poly deposition, gate oxide deposition, high-temperature oxidation and high-temperature annealing. They are supported by ACM Research’s own algorithm for stable temperature control.
The new processes can be added in the company’s previous oxide silicon nitride (SiN) systems by swapping certain modules and changes in some of the layouts. This will save customers cost, ACM Research said.
“Our strategy has consistently been to identify markets and applications with high growth potential within the semiconductor manufacturing industry and develop leading-edge technology in collaboration with our customers to address them,” ACM Research CEO David Wang said.
“We are now able to perform more than 80% of batch thermal processes, including LPCVD processes for SiN, HTO, un-doped poly and doped poly deposition, gate oxide deposition process, ultra-high temperature oxidizing and annealing processes up to 1200 Celcius. The rapid adoption of this new product line further validates our collaborative strategy.”
The company’s first SiN LPCVD was validated by a logic customer last year. Another furnace for alloy annealing, customized with micro-Torr level vacuum functionality, was supplied to a power device making customer in 2020 as well, the company said.
The new furnace processes are being tested at customer’s production sites, ACM Research added.