Samsung Electronics on Tuesday unveiled new power management ICs that can be integrated with its DDR5 dual in-line memory module.
The chips are integrated into the module rather than being placed on the mother board.
This will increase compatibility and signal integrity and thereby provide more reliable and sustained performance in the DRAM module, Samsung said.
The three new chips S2FPD01, S2FPD02 and S2FPC01 also comes with a hybrid gate driver and a new control design called asynchronous-based dual-phase buck control scheme.
The gate driver also allows the chips to operate at 91% power efficiency, the company said.
Meanwhile, the scheme allows the DC voltage to step drown from high to low fast in response to output load current.
It adapts the conversion accordingly and regulates the output voltage constantly.
The scheme also controls pulse width and frequency to prevent malfunctions when switching modes.
S2FPD01 and S2FPD02 are aimed at data centers and servers. The former is for modules with low density and the latter higher density.
S2FPC01 is designed for desktops or laptops.
The three new chips are being sampled by customers, Samsung added.