SK Hynix said on Wednesday that it has developed HBM3 DRAM.
HBM, or high bandwidth memory, connects multiple DRAM chips vertically to offer higher data processing compared to conventional DRAM chips.
It is used in data centers and supercomputers.
HBM3 is the fourth generation of the technology, after HBM, HBM2 and HBM2E.
SK Hynix said its latest chip can process data at 819GB/s, which is 78% faster than HBM2E.
The chip also comes with an on die error correction code, which will make it more reliable.
Capacity for the chip will range from 16GB to 24GB, the company said.
SK Hynix used through silicon via technology to connect 12 DRAM chips into a single module.
The technology will likely be commercialized next year.