UPDATED. 2022-10-04 17:10 (화)
DB HiTek secures 130nm and 110nm RF techs
DB HiTek secures 130nm and 110nm RF techs
  • Jang Keyoung Yoon
  • 승인 2022.01.13 09:41
  • 댓글 0
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Foundry to support 5G RF front-end production of customers
Image: DB HiTek
Image: DB HiTek

South Korean chip foundry firm DB HiTek said on Wednesday that it has developed process technologies for 130-nanometer (nm) and 110nm RF front-end chips.

RF front-end are transceivers used in IT devices from smartphones to IoT modules.

It is comprised of an antenna tuner, switch, low noise amplifier, power amplifier and other parts.

DB HiTek is offering foundry for low noise amplifier __ used to amplify frequency __ and switch.

The company said it will be using silicon-on-insulator (SOI) and high resistivity substrate wafer to prevent the chips from current leakages.

DB HiTek said its 130nm RF SOI offers a figure of merit of 84fs and breakdown voltage of 4.4V.

Its low noise amplifier offers 120GHz cut-off frequency __ the company plans to support up to over 150GHz by the first half of 2022.

The 110nm process offers a figure of merit of 164fs and breakdown voltage of 4.6V as well as an amplifier with 100GHz cut-off frequency.


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