SK Hynix said on Thursday that it has developed a Gen 6 10-nanometer (nm) (1c) 16Gb DDR5 DRAM.
The company becomes the first memory maker to do so, ahead of domestic rival Samsung.
The pair has had a back and forth between them as Samsung in May became the first memory maker to start manufacturing Gen 5 10nm (1b) DDR5 DRAM, ten days ahead of SK Hynix.
SK Hynix said it will start supplying its latest DRAM next year. The chip was developed 1c by expanding its previous 1b platform, the company said.
It developed new materials for certain extreme ultraviolet (EUV) processes and increased productivity by 30% compared to its predecessor, the memory chip maker added.
The 1c DDR5 has a speed of 8Gbps, 11% faster than 1b, while power efficiency was also improved by 9%, SK Hynix said.
