UPDATED. 2024-06-14 08:17 (금)
SK Hynix unveils 321-layer NAND
SK Hynix unveils 321-layer NAND
  • Noh Tae Min 기자
  • 승인 2023.08.10 09:45
  • 댓글 0
이 기사를 공유합니다

Company to start production in 2025
Image: SK Hynix
Image: SK Hynix

SK Hynix has unveiled a 321-layer NAND flash at a conference in the US.

The South Korean chip giant unveiled the 321-layer 1Tb triple-level cell NAND flash at Flash Summit 2023 in Santa Clara on Tuesday.

SK Hynix is the first memory chip maker to unveil a NAND with over 300 layers.

The company said its latest NAND has 59% increased productivity compared to its 238-layer 512Gb NAND.

Production of the 321-layer NAND will start in 2025, a chip it explained that meets the demand for high performance and high capacity in the AI era.

SK Hynix also unveiled PCIe Gen 5 interface SSD and UFS4.0 at the conference.

삭제한 댓글은 다시 복구할 수 없습니다.
그래도 삭제하시겠습니까?
댓글 0
계정을 선택하시면 로그인·계정인증을 통해
댓글을 남기실 수 있습니다.

  • 515, Nonhyeon-ro, Gangnam-gu, Seoul, Republic of Korea 4F, Ahsung Bldg.
  • 대표전화 : 82-2-2658-4707
  • 팩스 : 82-2-2659-4707
  • 청소년보호책임자 : Stan LEE
  • 법인명 : The Elec Inc.
  • 제호 : THE ELEC, Korea Electronics Industry Media
  • 등록번호 : 서울, 아05435
  • 등록일 : 2018-10-15
  • 발행일 : 2018-10-15
  • 발행인 : JY HAN
  • 편집인 : JY HAN
  • THE ELEC, Korea Electronics Industry Media Prohibiting unauthorized duplication,publishing,modification and distribution the material on this Site for any purpose.
  • Copyright © 2024 THE ELEC, Korea Electronics Industry Media. All rights reserved. mail to powerusr@thelec.kr