Samsung was considering applying molded underfill (MUF) in its next-generation DRAM, TheElec has learned.
The tech giant used thermal compression non-conductive film (TC NCF) in its existing registered dual in-line memory module (RDIMM).
But Samsung recently tested a mass reflow (MR) MUF process to 3-dimensional stack (3DS) memory and it showed a jump in throughput compared to TC NCF, but the physical characteristics deteriorated, sources said.
A senior executive at Samsung’s chip division last year ordered the testing of MUF.
Following the test, the company concluded that MUF won’t be applicable in high bandwidth memory (HBM) but is optimal for 3DS RDIMM.
3DS RDIMM is made using through silicon via (TSV) and is aimed at servers.
MUF is an epoxy molding compound and is getting attention in the chip industry following SK Hynix’s successful application of it in its HBM production. The compound was made in collaboration with Namics.
Samsung in turn is planning to collaborate with Samsung SDI to develop its own MUF compound. Samsung has also placed orders for equipment needed for the MUF application, the sources said.
Despite this, Samsung is expected to continue to use TC NCF in its HBM production. Micron is also expected to do the same. The material is considered more advantageous in avoiding wafer warpage.
